Plasma processes for amorphous chalcogenides thin films growth
Provider: Ministerstvo školství, mládeže a tělovýchovy
Programme: Francie - Barrande
Implementation period: 01.01.13 - 31.12.14
Workplace:
Fakulta chemicko-technologická - Katedra polygrafie a fotofyziky
Investigator: Němec Petr
Description:
In the frame of the project, high quality amorphous chalcogenide Ge-(As, Sb)-Se-(Te) thin films will be fabricated by pulsed laser deposition employing pulsed lasers with different characteristics (wavelength, pulse duration). The fabricated layers will be characterized in terms of the structure, morphology, and optical properties. The deposition process will be monitored by the studying the plasma plume with the ICCD camera fast imaging and space- and timeresolved optical emission spectroscopy. The obtained data should result in deeper understanding of the processes occurring during the thin films growth by plasma based techniques.
In the frame of the project, high quality amorphous chalcogenide Ge-(As, Sb)-Se-(Te) thin films will be fabricated by pulsed laser deposition employing pulsed lasers with different characteristics (wavelength, pulse duration). The fabricated layers will be characterized in terms of the structure, morphology, and optical properties. The deposition process will be monitored by the studying the plasma plume with the ICCD camera fast imaging and space- and timeresolved optical emission spectroscopy. The obtained data should result in deeper understanding of the processes occurring during the thin films growth by plasma based techniques.
