Analysis and application of plasma assisted processes for the fabrication of amorphous chalcogenide thin films.
Provider: Grantová agentura ČR
Programme: Standardní projekty (řešení od 1.2.2013)
Implementation period: 01.02.13 - 31.12.15
Workplace:
Fakulta chemicko-technologická - Katedra polygrafie a fotofyziky
Investigator: Němec Petr
Description:
Chalcogenide glasses and thin films are important group of inorganic materials which are suitable for optical and optoelectronic applications, for example materials for optical and electrical memories. In the frame of the project, plasma processes for fabrication of thin films of selected perspective amorphous chalcogenides systems - GeGaS(Se, Te), GeAsSe, GeSbTe, etc. - will be studied. Bulk glasses as well as amorphous thin films prepared by pulsed laser deposition will be characterized mainly from the point of view of local structure and optical properties. Plasma formed during interaction of intense laser pulses with chalcogenides will be studied in detail by LDI (laser desorption ionization) time-of-flight mass spectrometry. The results of chemical diagnostics of the plasma will be correlated with the structure and properties of starting bulk glasses and thin films. The results will be further used for the prognosis of synthesis of new materials and for the study and simulation of deposition processes.
Chalcogenide glasses and thin films are important group of inorganic materials which are suitable for optical and optoelectronic applications, for example materials for optical and electrical memories. In the frame of the project, plasma processes for fabrication of thin films of selected perspective amorphous chalcogenides systems - GeGaS(Se, Te), GeAsSe, GeSbTe, etc. - will be studied. Bulk glasses as well as amorphous thin films prepared by pulsed laser deposition will be characterized mainly from the point of view of local structure and optical properties. Plasma formed during interaction of intense laser pulses with chalcogenides will be studied in detail by LDI (laser desorption ionization) time-of-flight mass spectrometry. The results of chemical diagnostics of the plasma will be correlated with the structure and properties of starting bulk glasses and thin films. The results will be further used for the prognosis of synthesis of new materials and for the study and simulation of deposition processes.
