New 2D layered chalcogenides thin films and 3D nanostructures: Synthesis and characterization
Provider: Grantová agentura ČR
Programme: Standardní projekty
Implementation period: 01.03.15 - 31.12.17
Workplace:
Fakulta chemicko-technologická - Katedra obecné a anorganické chemie
Investigator: Wágner Tomáš
Description:
Metal organic vapor phase epitaxy (MOVPE) is leading technology for preparation of semiconductor structures for electronic and optoelectronic devices. MOVPE successful application and future development depends on availability of suitable organometallic (OM) precursors of reasonable volatility. Many of the currently used precursors are toxic, pyrophoric or sensitive to moisture and oxygen. The goal of presented project is: 1) to develop new, technologically promising and safe precursors, 2) to evaluate their usability by measuring their vapor pressures and 3) to test precursors with favorable properties by growing of MOVPE epitaxial structures; 4) complex characterization of the prepared materials and comparison od the results with theoretical electronic structure calculations. This project will benefit from expertise of two institutions gained in areas of i) OM precursor preparation (Univ. Pardubice); ii) thermal analysis and vapor pressure measurements (ICT Prague); iii) film growth by MOVPE (ICT Prague) and by spin coating (Univ. Pardubice; iv) characterization of thin layers
Metal organic vapor phase epitaxy (MOVPE) is leading technology for preparation of semiconductor structures for electronic and optoelectronic devices. MOVPE successful application and future development depends on availability of suitable organometallic (OM) precursors of reasonable volatility. Many of the currently used precursors are toxic, pyrophoric or sensitive to moisture and oxygen. The goal of presented project is: 1) to develop new, technologically promising and safe precursors, 2) to evaluate their usability by measuring their vapor pressures and 3) to test precursors with favorable properties by growing of MOVPE epitaxial structures; 4) complex characterization of the prepared materials and comparison od the results with theoretical electronic structure calculations. This project will benefit from expertise of two institutions gained in areas of i) OM precursor preparation (Univ. Pardubice); ii) thermal analysis and vapor pressure measurements (ICT Prague); iii) film growth by MOVPE (ICT Prague) and by spin coating (Univ. Pardubice; iv) characterization of thin layers
