X-ray photoelectron spectroscopy characterization and plasma etching structuration of amorphous chalcogenides
Provider: Ministerstvo školství, mládeže a tělovýchovy
Programme: Francie - Barrande
Implementation period: 01.01.17 - 31.12.18
Workplace:
Fakulta chemicko-technologická - Katedra polygrafie a fotofyziky
Investigator: Němec Petr
Description:
In the frame of the project, high quality chalcogenide glasses and their amorphous thin films Ge-(As, Sb)-Se-(Te) will be fabricated by pulsed laser deposition and by RF magnetron sputtering. The fabricated layers will be characterized in terms of the structure (XPS, Raman spectroscopy), morphology (AFM, SEM-EDX), and optical properties (spectroscopic ellipsometry). Fundamental knowledge on the etching mechanisms of chalcogenide glasses in high density plasmas will be obtained. In particular surface structure of chalcogenide thin films will be explored by XPS before, during, and after inductively coupled plasma etching. Plasma processes of potential interest for device patterning will be identified. Elementary patterns will be etched to evaluate their application.
In the frame of the project, high quality chalcogenide glasses and their amorphous thin films Ge-(As, Sb)-Se-(Te) will be fabricated by pulsed laser deposition and by RF magnetron sputtering. The fabricated layers will be characterized in terms of the structure (XPS, Raman spectroscopy), morphology (AFM, SEM-EDX), and optical properties (spectroscopic ellipsometry). Fundamental knowledge on the etching mechanisms of chalcogenide glasses in high density plasmas will be obtained. In particular surface structure of chalcogenide thin films will be explored by XPS before, during, and after inductively coupled plasma etching. Plasma processes of potential interest for device patterning will be identified. Elementary patterns will be etched to evaluate their application.
