Non-volatile memory based on resistive switching in thin films of chalcogenides
Provider: Technologická agentura České republiky
Programme: Program aplikovaného výzkumu, experimentálního vývoje a inovací GAMA
Implementation period: 01.07.17 - 30.11.19
Workplace:
Fakulta chemicko-technologická - Katedra obecné a anorganické chemie
Investigator: Wágner TomášTeam member: Rozsíval Pavel
Description:
Based on the proof-of-concept to develop a functional material suitable for the memory switching and information recording in an ion conductive thin layers of chalcogenides and to prepare a specimen for memory recording..
Based on the proof-of-concept to develop a functional material suitable for the memory switching and information recording in an ion conductive thin layers of chalcogenides and to prepare a specimen for memory recording..
