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Transition metal doped Bi2O2Se layered semiconductors: correlation of transport, magnetic and thermoelectric properties

Provider: Grantová agentura ČR
Programme: Standardní projekty
Implementation period: 01.01.22 - 31.12.24
Workplace: Fakulta chemicko-technologická - Ústav aplikované fyziky a matematiky
Investigator: Drašar Čestmír
Team member: Navrátil Jiří | Ruleová Pavlína | Kašparová Jana | Plecháček Tomáš | Čermák Patrik | Čermák Šraitrová Kateřina
Description:
We propose to study the influence of transition metals (TM) on transport, magnetic and thermoelectric properties of quasi-2D semiconductors Bi2O2X (X=Se, Te) in polycrystalline and single-crystalline form. Particularly, Bi2O2Se is an extraordinarily robust compound with relatively high mobility of charge carriers that can be prepared as single crystals and thin layers. This makes them appealing for advanced technologies. The project is motivated by ? Uncertainty in participation of structure components (Bi2O2/X) in charge transport and the very nature of the transport in terms of intrinsic point defects. ? Possibility of magnetic order induced by TMs (theoretically predicted) ? Exploration of TMs on thermoelectric properties of such systems The materials will be prepared by solid state reaction. Single crystals will be grown using physical and chemical transport. Exploration of the systems will be based on confrontation of structural, transport and magnetic properties. The starting point will be a comparison of doped and undoped materials.