Publication detail

On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films

Year: 2009

Type of publication: článek v odborném periodiku

Name of source: Journal of Non-Crystalline Solids

Publisher name: Elsevier Science BV

Place: Amsterdam

Page from-to: 1935-1938

Titles:

Language	Name	Abstract	Keywords
cze
eng	On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films	Thin amorphous films of Ge-Sb-Te were deposited from Ge2Sb2Te5 target by RF (f=13.56 MHz) magnetron sputtering in argon plasma. Composition and chemical homogeneity of target and prepared thin films were traced by Energy Dispersive X-ray Analysis coupled with Scanning Electron Microscope (SEM-EDX). SEM technique was also used for surface morphology observation. Crystallinity of target and prepared thin films was studied by X-ray Diffraction (XRD). Optical parameters of prepared thin films (spectral dependence of refractive index, optical band gap energy E-g(opt)) and film thicknesses were established via Variable Angle Spectroscopic Ellipsometry (VASE) supported by UV-Vis-NIR spectroscopy. Influence of deposition conditions (RF power, At pressure, angle divergency from normal direction) to composition, crystallinity, optical properties and deposition rate was established.	Amorphous semiconductors;Films and coatings;Sputtering;Chalcogenides;Optical spectroscopy;X-ray fluorescence;Scanning electron microscopy;Optical properties;Structure;Long range order; X-ray diffraction;Ge-Sb-Te;Phase-change;Crystallization

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