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Ag diffusion in amorphous As50Se50 films studied by XPS
Authors: Kalyva M. | Siokou A. | Yannopoulos S.N. | Wágner Tomáš | Orava Jiří | Frumar Miloslav
Year: 2009
Type of publication: článek v odborném periodiku
Name of source: Journal of Non-Crystalline Solids
Publisher name: Elsevier Science BV
Place: Amsterdam
Page from-to: 1844-1848
Titles:
Language Name Abstract Keywords
cze
eng Ag diffusion in amorphous As50Se50 films studied by XPS X-ray photoelectron spectroscopy and depth profile analysis were used to investigate the X-ray-induced silver photodiffusion into an amorphous As50Se50 thin film. It was found that during the induction period this interlayer is enriched in silver and the existing As-Se-Ag intermediate species are transformed to Ag-Se-Ag that form the metal source for the effective silver photodiffusion. With further irradiation photodiffusion proceeds by the disruption of Ag-Se bonds and the recombination of As atoms with Se to stable As-Se units. Ultimately, silver concentration reaches a plateau when the diffusion stops. A separated Ag2Se phase on the film's surface is identified at this stage. Depth profile analysis shows that silver has been homogenously diffused into the chalcogenide matrix and the Ag2Se phase exists only at the top surface layers probably in the form of quasi-crystalline clusters that prohibit further Ag diffusion. UPS/XPS;Chalcogenides;Photoinduced effects;XPS