Publication detail

The Effect of Titanium Diboride Addition on the Thermoelectric Properties of P-FeSi2 Semiconductors

Authors: Cai K. | Mueller E. | Drašar Čestmír | Stiewe C.

Year: 2004

Type of publication: článek v odborném periodiku

Name of source: Solid State Communications

Publisher name: Pergamon-Elsevier Science Ltd.

Place: Oxford

Page from-to: 325-329

Titles:

Language	Name	Abstract	Keywords
cze	.	N
eng	The Effect of Titanium Diboride Addition on the Thermoelectric Properties of P-FeSi2 Semiconductors	Beta-FeSi2?TiB2 composites with various amounts of TiB2, from 0 up to 30 vol%, were prepared by hot pressing. The electrical and thermal conductivities, and the Seebeck coefficient were measured as a function of temperature. The results show that the thermal and electrical transport behavior of the composites is different as the volume fraction of TiB2 is below and above about 0.255. A 5 vol% TiB2 added sample has higher figure of merit than one without TiB2 for temperatures above 650 K. The influence of an additional phase, -FeSi, formed during the hot pressing, on the thermoelectric properties of the -FeSi2?TiB2 composites was also discussed.	semiconductors;electronic transport;thermoelectric properties

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