Publication detail

Structure and optical properties of Ge-Se amorphous films prepared by pulsed laser deposition

Authors: Němec Petr | Frumar Miloslav | Jedelský Jaroslav | Černošek Zdeněk | Štábl Marek

Year: 2004

Type of publication: článek ve sborníku

Name of source: XX International Congress on Glass

Publisher name: The Ceramic Society of Japan

Place: Tokyo

Page from-to: P-09-019

Titles:

Language	Name	Abstract	Keywords
cze	Struktura a optické vlastnosti amorfních vrstev Ge-Se připravených pulsní laserovou depozicí	Struktura a optické vlastnosti amorfních vrstev Ge-Se připravených pulsní laserovou depozicí	amorphous chalcogenides, thin films, pulsed laser deposition
eng	Structure and optical properties of Ge-Se amorphous films prepared by pulsed laser deposition	Thin amorphous films of GexSe1-x system, where x = 0.22-0.28, were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt) of the layers were studied and discussed. The exposure and annealing causes bleaching of films, Egopt values are thus increasing. The structure is influenced only marginally by exposure as it results from Raman spectra, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between the fragments formed during pulsed laser deposition.	amorphous chalcogenides, thin films, pulsed laser deposition

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