Publication detail

Pulsed laser deposition of As rich amorphous thin films of As-Se system

Authors: Němec Petr | Jedelský Jaroslav | Frumar Miloslav | Štábl Marek | Vlček Milan

Year: 2004

Type of publication: článek ve sborníku

Name of source: XX International Congress on Glass

Publisher name: The Ceramic Society of Japan

Place: Tokyo

Page from-to: P09018/1-P09018/6

Titles:

Language	Name	Abstract	Keywords
cze	Pulsní laserová depozice arsenem bohatých tenkých vrstev systému As-Se	Pulsní laserová depozice arsenem bohatých tenkých vrstev systému As-Se	amorphous chalcogenides, thin films, pulsed laser deposition
eng	Pulsed laser deposition of As rich amorphous thin films of As-Se system	Thin amorphous AsxSe100-x (x=50, 57.1, 60) films were prepared using pulsed laser deposition (PLD). Raman scattering spectra and some optical properties (optical gap, index of refraction) of as-deposited films and their light-induced changes were studied. The structure of PLD films is formed mainly by As-based pyramids. Light-induced changes of Raman spectra of As-Se thin films are attributed to dissociation of As4Se3 cage-like structural units also present in the structure. Giant changes in index of refraction values and also significant photo-induced bleaching of the films after the exposure of as-deposited films are observed and discussed.	amorphous chalcogenides, thin films, pulsed laser deposition

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