Publication detail

Amorphous Ge-Se thin films prepared by pulsed laser deposition

Year: 2004

Type of publication: článek v odborném periodiku

Name of source: Philosophical Magazine

Publisher name: Taylor & Francis Ltd.

Place: Abingdon

Page from-to: 877-885

Titles:

Language	Name	Abstract	Keywords
cze	Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí	Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí	pulsed laser deposition, amorphous chalcogenides, thin films
eng	Amorphous Ge-Se thin films prepared by pulsed laser deposition	Thin amorphous GexSe1-x, x = 0.22-0.28, films were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt ) of the films were studied and discussed. The exposure and annealing causes bleaching of films, the Egopt is increasing. The structure is influenced only a little by exposure, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between fragments formed during pulsed laser deposition.	pulsed laser deposition, amorphous chalcogenides, thin films

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