Publication detail

Defect structure of Bi2-xAsxTe3 single crystals.

Year: 2007

Type of publication: článek v odborném periodiku

Name of source: Journal of Physics and Chemistry of Solids

Publisher name: Pergamon-Elsevier Science Ltd.

Place: Oxford

Page from-to: 1079-1082

Titles:

Language	Name	Abstract	Keywords
cze	Struktura defektů v monokrystalech Bi2-xAsxTe3	Článek je věnován vyšetření vztahu transportních vlastností monokrystalů Bi2-xAsxTe3. Bylo zjištěno, že dopování arsenem snižuje koncentraci volných děr, zatímco jejích pohyblivost roste.
eng	Defect structure of Bi2-xAsxTe3 single crystals.	Single crystals Bi2-xAsxTe3 were prepared by a modified Bridgman technique. The samples were characterized by X-ray diffraction analyses and measurement of Hall coefficient and electrical conductivity. Atomic absorption spectroscopy (AAS) was used for determination of actual content of As in the samples. The doping of Bi2Te3 with As leads to a decrease of the free carriers concentration while their mobility increases. The observed effects are discussed within a point defect model of Bi2-xAsxTe3 crystals.	chalcogenides;crystal growth;transport properties

Search