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Nano-scale annealing-induced structural changes in As-rich pulsed laser deposited AsxSe100-x films studied by XPS.
Authors: Kalyva M. | Siokou A. | Yannopoulos SN | Němec Petr | Frumar Miloslav
Year: 2005
Type of publication: článek ve sborníku
Name of source: 21st International Conference on Amorphous and Nanocrystalline Semiconductors
Publisher name: Universidade Nova de Lisboa
Place: Lisbon, Portugal
Page from-to: 348
Titles:
Language Name Abstract Keywords
cze Nano-změny struktury vyvolané temperací v arsenem bohatých vrstvách AsxSe100-x deponovaných pulsním laserem studované XPS. Nano-změny struktury vyvolané temperací v arsenem bohatých vrstvách AsxSe100-x deponovaných pulsním laserem byly studovány metodou XPS. amorfní chalkogenidy, pulsní laserová depozice, XPS
eng Nano-scale annealing-induced structural changes in As-rich pulsed laser deposited AsxSe100-x films studied by XPS. Nano-scale annealing-induced structural changes in As-rich pulsed laser deposited AsxSe100-x films were studied by XPS. amorphous chalcogenides, pulsed laser deposition, XPS