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Transport Coefficients of Titanium-doped Sb2Te3 Crystals
Authors: Drašar Čestmír | Steinhart Miloš | Lošťák Petr | Shin H. K. | Dyck J.S. | Uher C.
Year: 2005
Type of publication: článek v odborném periodiku
Name of source: Journal of Solid State Chemistry
Publisher name: Academic Press (Elsevier)
Page from-to: 1301-1307
Titles:
Language Name Abstract Keywords
cze Transportní koeficienty monokrystalů Sb2Te3 s příměsí Ti. Titanium-doped single crystals were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3-300 K. It was observed that with an increasing Ti content in the samples the electrical resistance, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of holes in the doped crystals. For the explanation of the observed effect a model of defects in the crystals is proposed. The data of the lattice thermal conductivity were fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.
eng Transport Coefficients of Titanium-doped Sb2Te3 Crystals Titanium-doped single crystals were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3-300 K. It was observed that with an increasing Ti content in the samples the electrical resistance, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of holes in the doped crystals. For the explanation of the observed effect a model of defects in the crystals is proposed. The data of the lattice thermal conductivity were fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons. Transport Coefficients, point defects, Sb(2-x)Ti(x)Te3 single crystals

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