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Influence of Hydrostatic Pressure on Transport Properties of Sb(2-x)V(x)Te3 and Ga(1-x)Mn(x)As
Authors: Dyck J.S. | Mitchell T.J. | Speero P.A. | Aronson M.C. | Drašar Čestmír | Lošťák Petr | Liu X. | Furdyna J.K.
Year: 2005
Type of publication: článek ve sborníku
Name of source: Bulletin of the American Physical Society
Publisher name: American Physical Society
Place: College Park
Page from-to: 1019
Titles:
Language Name Abstract Keywords
cze Vliv hydrostatického tlaku na transportní vlastnosti monokrystalů Sb(2-x)V(x)Te3 a Ga(1-x)Mn(x)As We present results of the transport properties of two types of ferromagnetic diluted magnetic semiconductors under hydrostatic pressures of up to 1.6GPa. High pressure measurements afford a reversible way to tune both the electronic structure and magnetic interactions of these materials. The behavior of the Curie temperature can be monitored via the position of the peak in the resistabce data associated with the ferromagnetic transition. In the case of Sm2-xVxTe3 pressure strongly affects the electrical resistivity and Curie temperature. For Ga1-xMnxAs little change is seem in the properties. measurements in magnetic field will also be presented and discussed.
eng Influence of Hydrostatic Pressure on Transport Properties of Sb(2-x)V(x)Te3 and Ga(1-x)Mn(x)As We present results of the transport properties of two types of ferromagnetic diluted magnetic semiconductors under hydrostatic pressures of up to 1.6GPa. High pressure measurements afford a reversible way to tune both the electronic structure and magnetic interactions of these materials. The behavior of the Curie temperature can be monitored via the position of the peak in the resistabce data associated with the ferromagnetic transition. In the case of Sm2-xVxTe3 pressure strongly affects the electrical resistivity and Curie temperature. For Ga1-xMnxAs little change is seem in the properties. measurements in magnetic field will also be presented and discussed. Hydrostatic pressure, transport and magnetic properties, diluted magnetic semiconductors