Publication detail

Rare-earth doped chalcogenide thin films fabricated by pulsed laser deposition

Year: 2005

Type of publication: článek v odborném periodiku

Name of source: Applied Surface Science

Publisher name: Elsevier Science BV

Place: Amsterdam

Page from-to: 376-380

Titles:

Language	Name	Abstract	Keywords
cze	Tenké verstvy chalkogenidů dotované vzácnými zeminami připravené metodou laserové ablace	Erbiem dotované Ge?Ga?Se tenké vrstvy byly připraveny metodou laserové ablace (PLD)a byly studovány jejich vlastnosti.	Amorphous chalcogenide; Thin film; Laser ablation; Pulsed laser deposition; Photoluminescence
eng	Rare-earth doped chalcogenide thin films fabricated by pulsed laser deposition	Erbium doped Ge?Ga?Se thin films were fabricated by the pulsed laser deposition (PLD) technique in vacuum using a KrF pulse laser with λ = 248 nm, and a pulse duration of 15 ns. The films were fabricated at room temperature onto glass substrates. The morphological, optical and thermal properties of the films showed good optical and thermal stability. The mechanical properties including film adhesion are relatively poor for thicker films and the microstructure reveals the presence of droplets. Annealing in vacuum improved the film adhesion and substantially enhanced the efficiency of photoluminescence.	Amorphous chalcogenide; Thin film; Laser ablation; Pulsed laser deposition; Photoluminescence

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