Publication detail

Optical measurements of silicon wafer temperature

Authors: Aoyama M | Postava K | Mistrík Jan | Yamaguchi T | Shio K

Year: 2007

Type of publication: článek v odborném periodiku

Name of source: Applied Surface Science

Publisher name: Elsevier Science BV

Place: Amsterdam

Page from-to: 416-419

Titles:

Language	Name	Abstract	Keywords
cze	Optická měření teploty křemíkových substrátů	Měření teploty křemíkových substrátů nedestruktivní optickou sondou založenou na diferenciální detekci odrazivosti p a s polarizované vlny v diskrétních vlnových délkách
eng	Optical measurements of silicon wafer temperature	: An optical technique for precise, non-contact, and real time measurement of silicon wafer temperature that uses the polarized reflectivity ratio R-p/R-s is described. The proposed method is based on temperature dependence of the optical functions of silicon. Expected strong temperature sensitivity is obtained near band gap. Simultaneous monitoring of temperature and oxide layer thickness is discussed using measurements at four wavelength 365 nm, 405 nm, 546 nm, and 820 nm.	non-contact temperature measurement; silicon wafer; polarized reflectivity; ellipsometry

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