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Fabrication of nano-gratings in arsenic sulphide films
Authors: Neilson | Kovalskiy Andriy | Vlček Miroslav | Jain | Miller
Year: 2007
Type of publication: článek v odborném periodiku
Name of source: Journal of Non-Crystalline Solids
Publisher name: Elsevier Science BV
Place: Amsterdam
Page from-to: 1427-1430
Titles:
Language Name Abstract Keywords
cze Tvorba nanomřížek ve vrstvách sulfidů arzenu Chalkogenidová skla se expozicí vysokoenergetickým svazkem elektronů stávají chemicky odolnější vůči aminovým lázním. Této schopnosti těchto materiálů bylo využito pro tvorbu nanomřížek za pomoci elektronového litografu. Ve vrstvách systému As-S se podařilo připravit linie o tloušťce 27 nm, navzájem oddělené 7 nm širokými mezerami, které měly výšku 80 - 250 nm.
eng Fabrication of nano-gratings in arsenic sulphide films Chalcogenide glasses, generally soluble in alkaline solvents, become more resistant to etching in amine-based solvents after exposure to high energy electrons (30 keV). We have used this characteristic for fabricating structures that are suitable for nanolithography. Using a scanning electron microscope equipped with a lithography system, nano-gratings are written digitally with varying point spacing, line pitch, and electron dose. The spot size of the electron beam is about 1 nm, but the finest structures that have been created in our arsenic sulphide films have lines with widths of 27 nm, separation of 7 nm, and heights from 80 to 250 nm. As the line pitch decreases, the best resolved spacing between the lines decreases until the lines blend into each other, much before the e-beam overlap. A discussion of the optimization of fabrication parameters is included. nano, grating, chalcogenide