Publication detail

Carrier-Mediated Ferromanetism in Vanadium-Doped (Sb1-xBix)2Te3 Solid Solutions

Authors: Zhou Zhenhua | Uher Ctirad | Žabčík Marek | Lošťák Petr

Year: 2006

Type of publication: článek v odborném periodiku

Name of source: Applied Physics Letters

Publisher name: American Institute of Physics

Place: Melville

Page from-to: 192502-1-3

Titles:

Language	Name	Abstract	Keywords
cze	Carrier-Mediated Ferromanetism in Vanadium-Doped (Sb1-xBix)2Te3 Solid Solutions	Ferromagnetism in tetradymite-type diluted magnetic semiconductors (Sb1-xBix)1.98V0.02Te3 (0 < x < 1) is revealed to be of hole-mediated nature. The increasing replacement of antimony with bismuth results in a monotonous decrease of the hole concentration and the Curie temperature while the electrical resistivity increases. The value of the Curie temperature shows a linear dependence of N∙p1/3, where N is the vanadium concentration and p is the concentration of hole. This trend agrees with the mean-field theory predictions.
eng	Carrier-Mediated Ferromanetism in Vanadium-Doped (Sb1-xBix)2Te3 Solid Solutions	Ferromagnetism in tetradymite-type diluted magnetic semiconductors (Sb1-xBix)1.98V0.02Te3 (0 < x < 1) is revealed to be of hole-mediated nature. The increasing replacement of antimony with bismuth results in a monotonous decrease of the hole concentration and the Curie temperature while the electrical resistivity increases. The value of the Curie temperature shows a linear dependence of N∙p1/3, where N is the vanadium concentration and p is the concentration of hole. This trend agrees with the mean-field theory predictions.	Diluted magnetic semiconductor; Transport property, electronic transport, magnetization

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