Publication detail

Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2?xVxTe3

Authors: Dyck J. F. | Ahilan K. | Aronson M.C. | Uher Ctirad | Lošťák Petr

Year: 2006

Type of publication: článek v odborném periodiku

Name of source: Physica Status Solidi B: Basic Solid State Physics

Publisher name: Wiley-VCH

Place: Weinheim

Page from-to: 1862-1866

Titles:

Language	Name	Abstract	Keywords
cze	Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2?xVxTe3	The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature TC of bulk, single crystal Sb1?xVxTe3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ, a signature of TC, moves to lower temperature with increasing pressure. An overall suppression of TC near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.
eng	Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2?xVxTe3	The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature TC of bulk, single crystal Sb1?xVxTe3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ, a signature of TC, moves to lower temperature with increasing pressure. An overall suppression of TC near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.	pressure effect resistivity diluted magnetic semiconductor

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