Publication detail

Lattice defects in Cu doped Bi2Te3 single crystals

Authors: Bludská J. | Jakubec I. | Drašar Čestmír | Lošťák Petr | Horák Jaromír

Year: 2007

Type of publication: článek v odborném periodiku

Name of source: Philosophical Magazine Part B

Publisher name: Taylor & Francis Ltd.

Place: Abingdon

Page from-to: 325-335

Titles:

Language	Name	Abstract	Keywords
cze	Lattice defects in Cu doped Bi2Te3 single crystals	Relations between the concentration of free charge carriers and the concentration of Cu atoms were studied on Bi2Te3 single crystals doped by copper in a wide range of the copper concentration with the aim to contribute to the clarification of the existence of inactive Cu ions embedded in the lattice of a Bi2Te3 crystal. We compare the changes in the concentrations of free charge carriers due to Cu-doping from melt with that of induced by electrochemical intercalation of copper. Models of possible defect structures of the Bi2Te3 crystals with admixtures of Cu atoms were proposed both for doped and intercalated single crystals.
eng	Lattice defects in Cu doped Bi2Te3 single crystals	Relations between the concentration of free charge carriers and the concentration of Cu atoms were studied on Bi2Te3 single crystals doped by copper in a wide range of the copper concentration with the aim to contribute to the clarification of the existence of inactive Cu ions embedded in the lattice of a Bi2Te3 crystal. We compare the changes in the concentrations of free charge carriers due to Cu-doping from melt with that of induced by electrochemical intercalation of copper. Models of possible defect structures of the Bi2Te3 crystals with admixtures of Cu atoms were proposed both for doped and intercalated single crystals.	tetradymite-type chalcogenides, Bi2Te3, Cu doping, Cu intercalation, defect structures

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