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Thermoelectric properties of quaternary BixSbyPbzSe3 single crystals
Authors: Drašar Čestmír | Kašparová Jana | Lošťák Petr | Kong Huijun | Zhou Zhenhua | Uher Ctirad
Year: 2006
Type of publication: článek ve sborníku
Name of source: 4th Europe Confer. on Thermoelectrics
Publisher name: School of Engineering Cardiff University
Place: Cardiff
Page from-to: 90-93
Titles:
Language Name Abstract Keywords
cze Thermoelectric properties of quaternary BixSbyPbzSe3 single crystals Single crystals of quaternary system based on Bi2Se3 co-doped with Sb and Pb were prepared using the Bridgman technique. Samples with varying content of Pb and Sb were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. The measurements indicate that by incorporating Pb and Sb in Bi2Se3 one lowers the concentration of free electrons and changes the character of electrical conductivity from n-type to p-type. This effect is explained in terms of point defects. Further, the evolution of the figure of merit is presented as a function of the impurity content.
eng Thermoelectric properties of quaternary BixSbyPbzSe3 single crystals Single crystals of quaternary system based on Bi2Se3 co-doped with Sb and Pb were prepared using the Bridgman technique. Samples with varying content of Pb and Sb were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. The measurements indicate that by incorporating Pb and Sb in Bi2Se3 one lowers the concentration of free electrons and changes the character of electrical conductivity from n-type to p-type. This effect is explained in terms of point defects. Further, the evolution of the figure of merit is presented as a function of the impurity content. Thermoelectric properties lattice parameters single crystalls

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