Publication detail

Defect Structure of Bi2-xAsxTe3 Single Crystals

Year: 2006

Type of publication: ostatní - přednáška nebo poster

Name of source: Sborník příspěvků Solid State Chemistry 2006

Publisher name: Univerzita Pardubice

Place:

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Titles:

Language	Name	Abstract	Keywords
cze	Defect Structure of Bi2-xAsxTe3 Single Crystals	Single crystals Bi2-xAsxTe3 were prepared by a modified Bridgman technique. The samples were characterized by the measurement of XRD, Hall coefficient and electrical conductivity. Atomic absorption spectroscopy (AAS) was used for determination of actual content of As in the samples. The doping of Bi2Te3 with As leads to a decrease of the free carriers concentration while their mobility increases. The observed effects are discussed within a point defect model of Bi2-xAsxTe3 crystals.
eng	Defect Structure of Bi2-xAsxTe3 Single Crystals	Single crystals Bi2-xAsxTe3 were prepared by a modified Bridgman technique. The samples were characterized by the measurement of XRD, Hall coefficient and electrical conductivity. Atomic absorption spectroscopy (AAS) was used for determination of actual content of As in the samples. The doping of Bi2Te3 with As leads to a decrease of the free carriers concentration while their mobility increases. The observed effects are discussed within a point defect model of Bi2-xAsxTe3 crystals.	Defect structure free carriers concentration

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