Publication detail

Point and structural defects in Bi2PbxTe3 single crystals

Year: 2007

Type of publication: článek v odborném periodiku

Name of source: Solid State Ionics

Publisher name: Elsevier Science BV

Place: Amsterdam

Page from-to: 3513-3519

Titles:

Language	Name	Abstract	Keywords
cze	Point and structural defects in Bi2PbxTe3 single crystals	The study of the doping proces of Bi2Te3 by Pb atoms in wide range of lead concentration revealed two distinct areas of influence of the incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb the ratio of generated holes to one incorporated Pb atom fals from value of 1.6 down to 0.55, at higher concentration the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure.
eng	Point and structural defects in Bi2PbxTe3 single crystals	The study of the doping proces of Bi2Te3 by Pb atoms in wide range of lead concentration revealed two distinct areas of influence of the incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb the ratio of generated holes to one incorporated Pb atom fals from value of 1.6 down to 0.55, at higher concentration the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure.	Bismuth telluride Pb doping Point and structural defects

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