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Photoemission studies of AsxSe100-x (x : 0, 50, 100) films prepared by pulsed-laser deposition - the effect of annealing.
Authors: Siokou A. | Kalyva M. | Yannopoulos S. | Frumar Miloslav | Němec Petr
Year: 2006
Type of publication: článek v odborném periodiku
Name of source: Journal of Physics: Condensed Matter
Publisher name: Institute of Physics Publishing Ltd
Place: Bristol
Page from-to: 5525-5534
Titles:
Language Name Abstract Keywords
cze Fotoemisní studie vrstev AsxSe100-x (x : 0, 50, 100) připravených pulzní laserovou depozicí - vliv temperace. Byly provedeny fotoemisní studie vrstev AsxSe100-x (x : 0, 50, 100) připravených pulzní laserovou depozicí. Detailně byl studován vliv temperace. amorfní chalkogenidy; tenké vrstvy; pulzní laserová depozice; XPS
eng Photoemission studies of AsxSe100-x (x : 0, 50, 100) films prepared by pulsed-laser deposition - the effect of annealing. Photoemission studies of AsxSe100-x (x : 0, 50, 100) films prepared by pulsed-laser deposition were performed and the effect of annealing was analyzed in detail. amorphous chalcogenides; thin films; pulsed laser deposition; XPS