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Electronic and structural changes induced by irradiation or annealing in pulsed laser deposited As50Se50 films. An XPS and UPS study.
Authors: Kalyva | Siokou | Yannopoulos | Němec Petr | Frumar Miloslav
Year: 2007
Type of publication: článek v odborném periodiku
Name of source: Journal of Physics and Chemistry of Solids
Publisher name: Pergamon-Elsevier Science Ltd.
Place: Oxford
Page from-to: 906-910
Titles:
Language Name Abstract Keywords
cze Elektronické and strukturní změny ve vrstvách As50Se50 deponovaných pulzním laserem indukované expozicí nebo temperací . XPS a UPS studie. Technikami XPS a UPS byly studovány elektronické and strukturní změny ve vrstvách As50Se50 deponovaných pulzním laserem indukované expozicí nebo temperací amorfní chalkogenidy, tenké vrstvy, pulzní laserová depozice, XPS, UPS
eng Electronic and structural changes induced by irradiation or annealing in pulsed laser deposited As50Se50 films. An XPS and UPS study. Electronic and structural changes induced by irradiation or annealing in pulsed laser deposited As50Se50 films were studied by XPS and UPS techniques. amorphous chalcogenides, thin films, pulsed laser deposition, XPS, UPS