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A comprehensive model of photoinduced volume change in arsenic chalcogenides by bandgap light
Authors: Chen Gang | Jain Himanshu | Vlček Miroslav | Ganjoo Ashtosh
Year: 2006
Type of publication: článek v odborném periodiku
Name of source: Physical Review B
Publisher name: American Physical Society
Place: College Park
Page from-to: 174203-174301
Titles:
Language Name Abstract Keywords
cze Všeobecný model fotoindukovaných objemových změn v chalkogenidech arzenu při expozici bandgapovým zářením V práci jsou s využitím Xray difrakce a techniky EXAFS studovány in situ fotoindukované změny ve vrstvách As4Se3 při jejich expozici zářením o energii srovnatelné s optickou šářkou zakázaného pásu. Na základě získaných výsledků je navržen fenomologický model fotoindukovaných objemových změn v chalkogenidech As.
eng A comprehensive model of photoinduced volume change in arsenic chalcogenides by bandgap light Photoinduced structural changes in molecular semi-crystalline As4Se3 films have been characterized by extended X-ray absorption fine structure and X-ray diffraction under in situ bandgap laser illumination. Transient and permanent changes in the local and long range structure have been determined quantitatively. In contrast to fully amorphous arsenic selenide films, a photoinduced contraction has been observed in semi-crystalline As4Se3 films. A phenomenological model is proposed for the photoinduced volume change in As-based chalcogenides. This model is based on two competing processes viz. intermolecular interaction through Coulombic repulsive force that results in photoexpansion, and cross-linking of molecular units through bond-switching that causes photocontraction. A guideline is presented for selecting chalcogenide glass composition with specific photoinduced volume change characteristics photoinduced phenomena, EXAFS, XRD, chalcogenide glass