Publication detail

Development of chalcogenide glass photoresists for gray scale lithography

Year: 2006

Type of publication: článek v odborném periodiku

Name of source: Journal of Non-Crystalline Solids

Publisher name: Elsevier Science BV

Place: Amsterdam

Page from-to: 589-594

Titles:

Language	Name	Abstract	Keywords
cze	Vývoj fotorezistu na bázi amorfního chalkogenidu pro gray scale litografii	Práce se zabývá tvorbou 3D mikrostruktur v anorganických fotorezistech na bázi systému As-S mokrým a suchýmm leptáním. Mokrou cestou byla připravena mikročočková pole s průměrem mikročoček 12 mikronů. Selektivního leptání suchou cestou bylo dosaženo s využitím jevu fotoindukované difuze kovu v binárním systému Ag-As2S3. S využitím metod SEM a XPS byla prokázána segregace Ag na rozhraní exponovaná-neexponovaná vrstva.
eng	Development of chalcogenide glass photoresists for gray scale lithography	Wet and dry negative etching procedures are evaluated for the fabrication of 3D graded microstructures in As?S based inorganic photoresists. Absorption of light and consequent photostructural changes near the surface layer enhance the chemical resistance of the As?S ﬁlms. The success of the procedure is demonstrated by fabricating arrays of 12 lm diameter microlenses in a thin As35S65 ﬁlm using a gray scale Cr mask and wet etching. The selectivity of dry etching is successfully realized by using photodiﬀusion in Ag?As2S3 bilayer structure. In this case, however, surface roughness or ?grass? is observed after etching. An unexpected segregation of silver is observed at the edges and at the boundary between the exposed and unexposed regions, which is investigated by SEM and XPS.	Diffusion and transport; Chalcogenides; Laser?matter interactions; Scanning electron microscope; Photoinduced effects

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