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SbxSe100-x system (0 < x < 8) studied by DSC and Raman spectroscopy.
Year: 2007
Type of publication: článek v odborném periodiku
Name of source: Optoelectronics and Advanced Materials - Rapid Communications
Publisher name: INOE & INFM Publishing House
Place: Bukurešť - Magurele
Page from-to: 663-666
Titles:
Language Name Abstract Keywords
cze Systém SbxSe100-x (0 < x < 8) studovaný pomocí DSC and Raman spektroskopie. Skla systému SbxSe100-x (0 < x < 8) byla studována pomocí DSC and Raman spektroskopie. DSC;Raman spektroskopie;krystalizace;Sb-Se systém
eng SbxSe100-x system (0 < x < 8) studied by DSC and Raman spectroscopy. The SbxSe100-x glass-forming system (x = 0, 1, 2, 4, and 8 at. %) was studied by conventional differential scanning calorimetry (DSC), Step Scan DSC and Raman spectroscopy. Glass transition temperature, Tg, as well as isobaric heat capacity change, ΔCp, were determined. Crystallization of Sb2Se3 from incongruent undercooled melt, followed by trigonal selenium crystallization was observed. The crystallization kinetics of Sb2Se3 was studied in details. Sb2Se3 crystallizes from incongruent melt at Tc = 107?2 oC with crystallization enthalpy ΔHc(Sb2Se3) = -52? J/g. Johnson-Mehl-Avrami kinetics of crystallization with Avrami kinetic exponent close to 3 was found. DSC;StepScan DSC;Raman spectroscopy;selenium;Sb-Se system;glass transition;crystallization