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Ga-Ge-Sb-S amorphous chalcogenides doped with Er3+ ions

Authors: Střižík Lukáš | Wágner Tomáš | Přikryl Jan | Pavlišta Martin | Oswald Jiří | Lorinčík Ján | Frumar Miloslav

Year: 2012

Type of publication: ostatní do riv

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
cze	Ga-Ge-Sb-S amorphous chalcogenides doped with Er3+ ions	This work deals with the preparation and properties of Ga-Ge-Sb-S amorphous chalcogenides as host matrix for rare-earth elements for up-conversion and photoluminescence applications. Glasses doped by Er3+ ions were prepared as bulk samples and thin films by PLD and flash TE methods. The optical properties and photoluminescence were studied via VASE ellipsometry, UV-VIS-NIR spectroscopy and photoluminescence PL spectroscopy. The f-f transitions of Er3+ energy levels were observed and discussed.	chalkogenidová skla; tenké vrstvy; fotoluminiscence
eng	Ga-Ge-Sb-S amorphous chalcogenides doped with Er3+ ions	This work deals with the preparation and properties of Ga-Ge-Sb-S amorphous chalcogenides as host matrix for rare-earth elements for up-conversion and photoluminescence applications. Glasses doped by Er3+ ions were prepared as bulk samples and thin films by PLD and flash TE methods. The optical properties and photoluminescence were studied via VASE ellipsometry, UV-VIS-NIR spectroscopy and photoluminescence PL spectroscopy. The f-f transitions of Er3+ energy levels were observed and discussed.	chalcogenide glasses; thin films; rare-earth doping; photoluminescence; up-conversion