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Physico-chemical properties of Sb-rich Sb-Se system thin films for phase change memories
Authors: Hromádko Luděk | Přikryl Jan | Orava Jiří | Košťál Petr | Frumar Miloslav
Year: 2012
Type of publication: ostatní do riv
Page from-to: nestránkováno
Titles:
Language Name Abstract Keywords
cze Physico-chemical properties of Sb-rich Sb-Se system thin films for phase change memories The bulk samples of composition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 ( = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. Activation energies of electrical conductivity of as-deposited films were in range 0.27 0.29 eV and they increased with increasing content of selenium. Large changes of optical reflectivity and electrical resistance due to crystallization showed that these materials can be potentially applied as active parts for data storage cells. chalkogenidová skla; tenké vrstvy; elektrické vlastnosti; optické vlastnosti
eng Physico-chemical properties of Sb-rich Sb-Se system thin films for phase change memories The bulk samples of composition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 ( = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. Activation energies of electrical conductivity of as-deposited films were in range 0.27 0.29 eV and they increased with increasing content of selenium. Large changes of optical reflectivity and electrical resistance due to crystallization showed that these materials can be potentially applied as active parts for data storage cells. chalcogenide glasses; thin films; electrical properties; optical properties

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