Publication detail

Amorphous and crystallized Ge-Sb-Te thin films deposited by pulsed laser: local structure using Raman scattering spectroscopy

Year: 2012

Type of publication: článek v odborném periodiku

Name of source: Materials Chemistry and Physics

Publisher name: Elsevier Science SA

Place: Lausanne

Page from-to: 935-941

Titles:

Language	Name	Abstract	Keywords
cze	Amorfní a krystalické tenké vrstvy Ge-Sb-Te deponované pulzním laserem: lokální struktura užitím spektroskopie Ramanova rozptylu	Lokální struktura panenských (amorfních) i temperovaných (krystalických) tenkých vrstev (GeTe) x(Sb 2Te 3) 1-x, (x = 1, 0.66, 0.5, 0.33, and 0) byla studována pomocí spektroskopie Ramanova rozptylu.
eng	Amorphous and crystallized Ge-Sb-Te thin films deposited by pulsed laser: local structure using Raman scattering spectroscopy	The local structure of as-deposited (amorphous) as well as annealed (crystallized) (GeTe) x(Sb 2Te 3) 1-x, (x = 1, 0.66, 0.5, 0.33, and 0) thin films was studied using Raman scattering spectroscopy.	amorphous chalcogenides; Raman spectroscopy and scattering; thin films; pulsed laser deposition

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