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Publication detail

Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films
Year: 2012
Type of publication: článek v odborném periodiku
Name of source: Journal of Thermal Analysis and Calorimetry
Publisher name: Springer
Page from-to: 275-280
Titles:
Language Name Abstract Keywords
cze Kinetika růstu krystalů Sb2S3 v amorfních filmech Ge-Sb-S Kinetika růstu krystalů Sb2S3 v amorfních filmech Ge-Sb-S byla studována optickou mikroskopií při teplotách 575-623 K. Pro studium byla vybrána složení obsahující 40 a 50 mol.% GeS2 v Sb2S3. Z naměřených dat byla vypočtena aktivační energie růstu krystalů. růst krystalů; tenké filmy; Ge-Sb-S; optická mikroskopie
eng Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films Sb2S3 crystal growth kinetics in (GeS2) (x) (Sb2S3)(1-x) thin films (x = 0.4 and 0.5) have been investigated through this study by optical microscopy in the temperature range of 575-623 K. Relative complex crystalline structures composed of submicrometer-thin Sb2S3 crystal fibers develop linearly with time. The data on temperature dependence of crystal growth rate exhibit an exponential behavior. Corresponding activation energies were found to be E (G) = 279 +/- A 7 kJ mol(-1) for x = 0.4 and E (G) = 255 +/- A 5 kJ mol(-1) for x = 0.5. These values are similar to activation energies of crystal growth in bulk glasses of the same compositions. The crystal growth is controlled by liquid-crystal interface kinetics. It seems that the 2D surface-nucleated growth is operative in this particular case. The calculated crystal growth rate for this model is in good agreement with experimental data. The crystal growth kinetic characteristic is similar for both the bulk glass and thin film for x = 0.4 composition. However, it differs considerably for x = 0.5 composition. Thermodynamic and kinetic aspects of crystal growth are discussed in terms of Jackson's theory of liquid-crystal interface. crystal growth; thin films; Ge-Sb-S; optical microscopy

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