University of PardubiceFaculty of Chemical Technology

University

Employees
|
Students
Česky

Publication detail

L3-edge XANES study of as-deposited and thermally crystallized GeTe-based phase-change memory alloys

Authors: Krbal Miloš

Year: 2012

Type of publication: ostatní do riv

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
cze	L3-edge XANES study of as-deposited and thermally crystallized GeTe-based phase-change memory alloys	Using Ge-L3 edge XANES studies, we demonstrate a noticeable difference in the local structure between as-deposited amorphous and thermally crystalized GeTe-based phase change alloys. The pronounced changes appear as a step-like shoulder in the absorption edge, corresponding to 2p-5s and 4d electron transitions, and in overall spectrall shape above the edge where the XANES spectrum becomes featureless for the amorphous phase.	XANES; chalkogenidy; paměťová slitina
eng	L3-edge XANES study of as-deposited and thermally crystallized GeTe-based phase-change memory alloys	Using Ge-L3 edge XANES studies, we demonstrate a noticeable difference in the local structure between as-deposited amorphous and thermally crystalized GeTe-based phase change alloys. The pronounced changes appear as a step-like shoulder in the absorption edge, corresponding to 2p-5s and 4d electron transitions, and in overall spectrall shape above the edge where the XANES spectrum becomes featureless for the amorphous phase.	XANES; L3-edgeGETe-based alloys; chalcogenides