Publication detail

THE CRYSTAL GROWTH KINETICS IN GeS2

Authors: Podzemná Veronika | Málek Jiří | Barták Jaroslav

Year: 2012

Type of publication: ostatní do riv

Name of source: AICAT 2012: XXXIV National Congress on Calorimetry, Thermal Analysis and Applied Thermodynamics

Publisher name: Sapienza University of Rome

Place: Rome

Page from-to: 135-135

Titles:

Language	Name	Abstract	Keywords
cze	Kinetika růstu krystalů v GeS2	Měření růstu krystalů GeS2 v podchlazené tavenině bylo provedeno metodou optické mikroskopie. Délka krystalů byla měřena izotermně při teplotách v rozmězí 398°C až 437°C. Z naměřených údajů byla zjištěna kinetika růstu a stanovena aktivační energie růstu krystalů.	GeS2; krystalový růst; optická mikroskopie; podchlazená tavenina
eng	THE CRYSTAL GROWTH KINETICS IN GeS2	Optical measurement of GeS2 crystal growth in undercooled melts was carried out by using optical microscopy. The length of crystals was measured isothermally by different temperature in the range 398-437 °C as time dependence. This behavior is characteristic for crystal growth controlled by crystal-liquid interface kinetics. The temperature dependence of reduced growth rate UR provides information about the growth sites at the interface. There are three basic models suitable for description of crystal growth in undercooled melt. Positive curvature of reduced growth rate depending on undercooling is typical for two-dimensional surface nucleated growth. The activation energy of crystal growth of GeS2 EG = 167 ± 8 kJ·mol-1 was obtained from the slope of logarithm of crystal growth rate u plotted versus reciprocal temperature 1/T. The crystal growth kinetics of GeS2 thin films will be discussed.	GeS2; crystal growth; optical microscopy; undercooled melt

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