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On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses
Authors: Hughes Mark A. | Gwilliam Russell M. | Homewood Kevin | Gholipour Behrad | Hewak Daniel W. | Lee Tae-Hoon | Elliott Stephen R. | Suzuki Takenobu | Ohishi Yasutake | Kohoutek Tomáš | Curry Richard J.
Year: 2013
Type of publication: článek v odborném periodiku
Name of source: Optics Express
Publisher name: Optical Society of America
Place: Washington, DC
Page from-to: 8101-8115
Titles:
Language Name Abstract Keywords
cze Analogie mezi fotoluminescencí a změnou typu vodivosti v Bi- a Pb-dotovaných sklech Koncentrace Bi v oxidových sklech závisí na optické bazicitě hostitele. Chalkogenidová skla se chovají velice podobně, měřením fotoluminesce jsme zjistili, že Bi se v těchto sklech vyskytuje v nové entitě podobné té, ktérá stojí za změnou typu vodivosti (nositelů proudu) pozorované dříve u těchto materiálů. germaničitá skla, amorfní polovodivé diody, chalkogenidová skla, infračervená luminiscence, zesílení signálu, bismut, olovo, vláknové lasery
eng On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses Reaction order in Bi-doped oxide glasses depends on the optical basicity of the glass host. Red and NIR photoluminescence (PL) bands result from Bi2+ and Bi-n clusters, respectively. Very similar centers are present in Bi- and Pb-doped oxide and chalcogenide glasses. Bi-implanted and Bi melt-doped chalcogenide glasses display new PL bands, indicating that new Bi centers are formed. Bi-related PL bands have been observed in glasses with very similar compositions to those in which carrier-type reversal has been observed, indicating that these phenomena are related to the same Bi centers, which we suggest are interstitial Bi2+ and Bi clusters. (c) 2013 Optical Society of America germanium oxide glasses; amorphous-semiconductor diodes; band infrared luminescence; chalcogenide glasses; optical-properties; fiber laser; bismuth; emission; lead; amplification