Publication detail

Nucleation and growth in amorphous (GeS2)(0.9)(Sb2S3)(0.1) thin films

Authors: Pillai Suresh Kumar | Podzemná Veronika | Barták Jaroslav | Málek Jiří

Year: 2013

Type of publication: článek v odborném periodiku

Name of source: Journal of Crystal Growth

Publisher name: Elsevier Science BV

Place: Amsterdam

Page from-to: 87-93

Titles:

Language	Name	Abstract	Keywords
cze	Nukleace a růst v amorfním tenkém filmu (GeS2)(0.9)(Sb2S3)(0.1)	Rychlost izotermní nukleace a růstu v chalkogenidovém tenkém filmu (GeS2)(0.9)(Sb2S3)(0.1) byla srtudována pomocí optické mikroskopie. Nukleační data byla získána z dvoukrokového experimentu, následovaného analýzou polarizovaných optických mikrografů. Aplikovatelnost klasické nukleační teorie na nukleační data byla diskutována.	nukleace; amorfní tenký film; růst; chalkogenidová skla
eng	Nucleation and growth in amorphous (GeS2)(0.9)(Sb2S3)(0.1) thin films	The rates of isothermal nucleation and growth in chalcogenide glass thin films of (GeS2)(0.9)(Sb2S3)(0.1) were studied using optical microscopy. Nucleation data was obtained from double stage heat treatment, followed by image analysis of polarized optical micrographs. The applicability of classical nucleation theory (CNT) to the nucleation data has been discussed. The growth data, corrected for viscosity suggest interface controlled 2D nucleated growth of beta-GeS2 crystals. The isothermal curves of nucleation and growth determined by CNT and 2D nucleated growth model, respectively were found to be weakly intersecting. The nucleation curve had maxima at 350 degrees C, which is below the glass transition temperature, while the growth curve had a peak at 439 degrees C. Crown	nucleation; amorphous thin film growth; chalcogenide glasses

Search