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Tuning the Temperature Domain of Phonon Drag in Thin Films by the Choice of Substrate
Authors: Wang Guoyu | Endicott Lynn | Chi Hang | Lošťák Petr | Uher Ctirad
Year: 2013
Type of publication: článek v odborném periodiku
Name of source: Physical Review Letters
Publisher name: American Physical Society
Place: College Park
Page from-to: "046803-1"-"046803-5"
Titles:
Language Name Abstract Keywords
cze Zjištění závislosti změny teplotní závislosti tenkých vrstev v závislosti na použité podložce V práci je předloženo zjištění závislosti pozorované změny teplotní závislosti tenkých vrstev Bi2Te3 v závislosti na použité podložce. Bi2Te3;tenká vrstva;teplotní závislost
eng Tuning the Temperature Domain of Phonon Drag in Thin Films by the Choice of Substrate At low temperatures, in reasonably pure conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out of equilibrium phonons, giving rise to a large contribution to the Seebeck coefficient called phonon drag. We demonstrate a spectacular influence of substrate phonons on charge carriers in thin films of Bi2Te3. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. 2-DIMENSIONAL ELECTRON-GAS;THERMOPOWER;BI2TE3;SYSTEMS