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Wavelength Dependence of Photostructural Transformations in As2S3 Thin Films
Authors: Kovalskiy Andriy | Vlček Miroslav | Pálka Karel | Golovchak Roman | Jain Himanshu
Year: 2013
Type of publication: článek v odborném periodiku
Name of source: Physics Procedia
Publisher name: Elsevier Science BV
Place: Amsterdam
Page from-to: 75-81
Titles:
Language Name Abstract Keywords
cze Závislost fotostrukturních změn v tenkých vrstvách As2S3 na vlnové délce Byla studována spektrální závislost fotostrukturních změn na povrchu a v objemu vakuově napařených tenkých vrstev As2S3 v závislosti osvětlení zářením s energií vyšší, rovnou nebo nižší než je šířka zakázaného pásu materiálu. chalkogenidová skla; fotoindukované jevy; Ramanova spektroskopie; XPS
eng Wavelength Dependence of Photostructural Transformations in As2S3 Thin Films Spectral dependence of photostructural transformations on the surface and in the interior of thermally evaporated As2S3 thin films is studied under the influence of bandgap, sub-bandgap and super-bandgap light. For the given light intensity (W~15 mW/cm2) the irradiation by bandgap and super-bandgap light leads to partial restoration of pyramidal structural units in the film, which is a characteristic of the bulk glasses of this stoichiometric composition. The mechanism of photostructural transformations on the surface of the film exhibits strong spectral dependence. S- rich layer is formed upon irradiation by super-bandgap UV light. The sub-bandgap light does not cause any noticeable photostructural transformations at this light intensity. chalcogenide glass; photoindused effects; Raman spectroscopy; X-ray photoelectron spectroscopy