Publication detail

Nucleation and Growth of GeS2 in (GeS2)0.9(Sb2S3)0.1 Thin Films Studied by Image Analysis

Authors: Pillai Suresh Kumar | Podzemná Veronika | Barták Jaroslav | Málek Jiří

Year: 2013

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Nucleation and Growth of GeS2 in (GeS2)0.9(Sb2S3)0.1 Thin Films Studied by Image Analysis	An images analysis technique for automated estimation nucleation rates was developed and applied in the case of nucleation of beta-GeS2 in films. Nucleation data was obtained for temperature range, 300-380°C. Classical nucleation theory was applicable. Experimentally derived nucleation parameters are meaningful. Crystal growth data suggest 2D nucleated growth. Extrapolated curves predicts a maximum nucleation at 350°c and growth at 439°C. Both the aforementioned curves are weakly intersecting.	nucleation; crystal growth; GeS2; glass; Ge-Sb-S system

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