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Crystallization behaviour of Ge17Sb23Se60 thin films
Year: 2014
Type of publication: článek v odborném periodiku
Name of source: Philosophical Magazine
Publisher name: Taylor & Francis Ltd.
Place: Abingdon
Page from-to: 1301-1310
Titles:
Language Name Abstract Keywords
cze Krystalizační chování Ge17Sb22Se60 tenkých vrstev Krystalizační chování čerstvě připravených a nukleovaných tenkých vrstev o složení Ge17Sb22Se60 bylo studováno pomocí DSC, RTG a SEM. Detailní analýza krystalizační kinetiky byla zpracována. krystalizace; tenké vrstvy; Ge-Sb-Se; DSC
eng Crystallization behaviour of Ge17Sb23Se60 thin films The crystallization behaviour of as-prepared and nucleated Ge17Sb23Se60 thin films was studied by means of differential scanning calorimetry, X-ray diffraction analysis and scanning electron microscopy. Detailed analysis of the non-isothermal crystal growth kinetics was performed; the apparent activation energy, kinetic model and value of the pre-exponential factor were determined. The kinetic behaviour was found to be surprisingly close to the ideal Johnson-Mehl-Avrami nucleation-growth process, with the only non-ideality being the prolonged peak end tail (which may be a specificity associated with certain thicknesses of thin layers). This corresponds to the initiation of crystal growth in agreement with the classical nucleation theory, with the amount of mechanical defects and strains being negligible. The value of the kinetic parameter suggests two-dimensional crystal growth, which is consistent with the idea of macroscopic crystallites growing in a sterically restricted thin layer. A similar conclusion can be made on the basis of direct microscopic observation of the crystallites' morphology. thin film; crystallization kinetics; Ge-Sb-Se; DSC; JMA model

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