Publication detail

Crystallization kinetics of a-Se, part 4: Thin films

Authors: Svoboda Roman | Gutwirth Jan | Málek Jiří

Year: 2014

Type of publication: článek v odborném periodiku

Name of source: Philosophical Magazine

Publisher name: Taylor & Francis Ltd.

Place: Abingdon

Page from-to: 3036-3051

Titles:

Language	Name	Abstract	Keywords
cze	Krystalizační kinetika amorfního selenu, část 4: Tenké filmy	Pomocí DSC byla studována krystalizační kinetika amorfních tenkých vrstev selenu v závislosti na tloušťce filmu a rychlosti depozice. V této práci jsou diskutovány nové výsledky ve srovnání s dřívějšími studiemi.	krystalizace; DSC; amorfní Se; tenké vrstvy
eng	Crystallization kinetics of a-Se, part 4: Thin films	Differential scanning calorimetry was used to study the crystallization behaviour of selenium thin films in dependence on film thickness and deposition rate. In the current work, which is the fourth in a sequence of articles dealing with crystallization kinetics of a-Se, the non-isothermal crystallization kinetics was described in terms of the Johnson-Mehl-Avrami nucleation-growth model. Two-dimensional crystallite growth, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. It was found that neither the film thickness (tested within the 100-2350nm range) nor the deposition rate appears to have any significant influence on the crystallization kinetics. However, the higher amount of intrinsic defects possibly produced by a higher deposition rate seems to accelerate the crystallization, shifting it towards lower temperatures. Very good correlation between the results obtained for thin films and those for fine powders was found. Based on the obtained results, interpretations of relevant literature data were made.	crystallization kinetics; DSC; JMA model; Se glass; thin film

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