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Publication detail

Crystallization behavior in Se90Te10 and Se80Te20 thin films
Authors: Barták Jaroslav | Málek Jiří | Košťál Petr | Segawa Hiroyo | Yamabe-Mitarai Yoko
Year: 2014
Type of publication: článek v odborném periodiku
Name of source: Journal of Applied Physics
Publisher name: American Institute of Physics
Place: Melville
Page from-to: "123506-1"-"123506-7"
Titles:
Language Name Abstract Keywords
cze Krystalizační chování Se90Te10 a Se80Te20 tenkých filmů Izotermní krystalizační kinetika v tenkých vrstvách Se90Te10 a Se80Te20 byla zkoumána pomocí mikroskopie a in-situ XRD. Se-Te skla; fázové změny; kinetika; viskozita
eng Crystallization behavior in Se90Te10 and Se80Te20 thin films Isothermal crystal growth kinetics in Se90Te10 and Se80Te20 thin films was studied by microscopy and in situ X-ray diffraction (XRD) measurements. The spherulite-like crystals grew linearly with time. In a narrow temperature range of between 65 and 85 degrees C, crystal growth rates exhibit simple exponential behavior with activation energies E-G = 193 +/- 4 kJ mol(-1) for Se90Te10 and E-G = 195 +/- 4 kJ mol(-1) for Se80Te20. The crystal growth in both compositions is controlled by liquid-crystal interface kinetics and can be described by a screw dislocation growth model. From the XRD data, the crystallization fraction was estimated. The crystallization data were described by Johnson-Mehl-Avrami (JMA) model with Avrami exponents m = 1.4 +/- 0.3 for Se90Te10 and m = 1.6 +/- 0.4 for Se80Te20. Activation energies were estimated from the temperature dependence of rate constant evaluated from the JMA model. The activation energies of nucleation-growth process were found to be E-c = 184 +/- 21 kJ mol(-1) for Se90Te10 and E-c = 179 +/- 7 kJ mol(-1) for Se80Te20, and are comparable with activation energies of crystal growth. (C) 2014 AIP Publishing LLC. Se-Te glass; phase-change; kinetics; viscosity

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