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Publication detail

Physico-chemical properties of Sb-rich (Sb, In) - Te thin films
Year: 2014
Type of publication: článek v odborném periodiku
Name of source: Journal of Alloys and Compounds
Publisher name: Elsevier Science SA
Place: Lausanne
Page from-to: 306-309
Titles:
Language Name Abstract Keywords
cze Fyzikálně chemické vlastnosti (Sb ,In) - Te tenkých filmů bohatých na Sb Byly studovány phase change materiály systému Sb70-xInxTe30 (x = 0, 7, 14). Tenké filmy připravené mžikovým napařováním byly amorfní s vysokým plošným elektrickým odporem (Rs) (≈106 Ω/sqr., T = 300 K). Při zahřívání elektrický odpor klesl na 10-102 Ω/sqr., z důvodu krystalizace materiálu. Krystalizační teploty byly 113, 158 a 183°C pro složení Sb70Te30, Sb63In7Te30 a Sb56In14Te30. Aktivační energie krystalizace byla vyhodnocena podle Kissngera a byla 2,42, 2,72 a 3,15 eV pro Sb70Te30, Sb63In7Te30 and Sb56In14Te30. tenké filmy; fáze změny materiálu
eng Physico-chemical properties of Sb-rich (Sb, In) - Te thin films The phase change materials of the system Sb70−xInxTe30 (x = 0, 7 and 14) were studied. The thin films prepared by thermal flash evaporation were amorphous with high electrical sheet resistance (Rs) (≈106 Ω/sqr., T = 300 K). When heated, the resistance dropped to 10–102 Ω/sqr. due to crystallization of the films. The crystallization temperatures were 113, 158 and 183 °C for Sb70Te30, Sb63In7Te30 and Sb56In14Te30, respectively. The activation energies of crystallization as evaluated by Kissinger’s plot were 2.42, 2.72 and 3.15 eV for Sb70Te30, Sb63In7Te30 and Sb56In14Te30, respectively. The optical band gap of amorphous films increases with increasing content of indium from 0.38 to 0.47 eV. Values of refractive index were found in range of 5.43–4.77 (λ = 1500 nm) for amorphous state and 7.06–5.89 for crystalline state in dependence on composition. They decreased with increasing content of indium. thin films; phase change materials

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