Publication detail

Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors

Authors: Manson J | Madubuonu A | Crandles D.A | Uher C | Lošťák Petr

Year: 2014

Type of publication: článek v odborném periodiku

Name of source: Physical Review B

Publisher name: American Physical Society

Place: College Park

Page from-to: "205205-1"-"205205-7"

Titles:

Language	Name	Abstract	Keywords
cze	Infračervená spektroskopie Cr- a V-dopovaného Sb2Te3: Zředěných magnetických polovodičů	Je předložena interpretace teplotních závislostí reflektivity v oblasti rezonanční frekvence plasmatu krystalů Sb2Te3 s příměsí atomu Cr a V.	feromagnetické polovodiče;optické vlastnosti;monokrystaly;transport;odolnost;kov
eng	Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors	Temperature dependent optical reflectance measurements on well characterized samples of nonintentionally doped, Cr-doped, and V-doped Sb2Te3 show that both the parent compound and the Cr-doped version are narrow-gap semiconductors (E-g approximate to 0.25 eV) with a conventional Drude free carrier absorption. The carrier density increases slightly with decreasing temperature while the scattering rate increases quadratically with temperature, which is a sign of the importance of optical phonon scattering. Vanadium doping introduces a change in the temperature dependence of the scattering rate as well as higher electrical resistivity than Cr-doped Sb2Te3. An analysis of the literature values of the saturation magnetization of Sb2-xVxTe3 for H parallel to c suggests V is in a mixed valence state V3+/V4+.	FERROMAGNETIC SEMICONDUCTORS; OPTICAL-PROPERTIES; SINGLE-CRYSTALS; TRANSPORT; SRRUO3; RESISTIVITY; TRANSITION; BI2TE3; METAL

Search