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Optical properties of Er3+-doped Ga-Ge-Sb(As)-S chalcogenide glasses
Authors: Střižík Lukáš | Wágner Tomáš | Oswald Jiří | Walsh Brian M. | Zhang Jihong | Pavlišta Martin | Frumar Miloslav | Heo Jong
Year: 2014
Type of publication: ostatní - přednáška nebo poster
Page from-to: nestránkováno
Titles:
Language Name Abstract Keywords
eng Optical properties of Er3+-doped Ga-Ge-Sb(As)-S chalcogenide glasses Ga–Ge–Sb(As)–S amorphous chalcogenides doped with 0.5 at.% Er3+ have been studied for achievement of efficient photon up conversion emission starting from green to near infrared spectral region as well as for Stokes emission in near and mid infrared spectral region, i.e. Er3+:4I13/2→4I15/2 (≈ 1.5 μm) and Er3+:4I11/2→4I13/2 (≈ 2.7 μm) at pumping wavelengths of 808, 980 and 1550 nm lasers. Photon up conversion emission was observed from Er3+ intra 4f transitions approximately at wavelengths of 530, 550, 660, 810 and 990 nm. Moreover, weak anti Stokes emission bands originating from Er3+:4F7/2→4I15/2 (≈ 495 nm) and Er3+:4S3/2→4I13/2 (≈ 850 nm) transitions were also observed. Er3+:4F7/2→4I15/2 (≈ 495 nm) up conversion transition is the highest energy achievable emission band in Er3+ doped sulfides [1]. Judd Ofelt theory [2] was used for the study of local environment around the Er3+ ions embedded in amorphous matrix in dependence of chemical composition when [GaS4] tetrahedral units are replaced with [SbS3] pyramidal units. The accuracy of Judd Ofelt analysis in dependence of the used number and types of Er3+: J→J’ absorption bands as well as radiative lifetimes τrJO (J’→J) calculated via Judd Ofelt phenomenological parameters (Ω2, Ω4, Ω6) and experimental ones τ are discussed. The spectroscopic quality factor Ω4/Ω6 predicts these materials to be capable for stimulated laser emission of such J’→J transitions where the first term of doubly reduced matrix elements is zero or small. The optical gain coefficient as a function of relative population of the 4I13/2 and 4I15/2 manifolds was calculated to predict the applicability of these materials for EDFA. In addition, there was also possible to observe 2.7 μm mid infrared emission originating from Er3+:4I11/2→4I13/2 Stokes transitions at pumping wavelengths of 808 and 980 nm. Studied phosphors are promising e.g. for surgery lasers, LIDAR and sensors. Er3+; Ga-Ge-Sb-S; Ga-Ge-As-S, chalcogenide glasses, luminescence