University of PardubiceFaculty of Chemical Technology

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Ga-Ge-Sb-S: Er3 amorphous chalcogenides: photoluminiscence and photon up-conversion

Authors: Střižík Lukáš | Wágner Tomáš

Year: 2014

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Ga-Ge-Sb-S: Er3 amorphous chalcogenides: photoluminiscence and photon up-conversion	We report on the compositional tuning in (Ge25Ga10−xSbxS65)99.5Er0.5 amorphous chalcogenides (x = 0.5, 2.5 and 5.0 at%) to achieve the intense photon up-conversion emission starting from green spectral region as well as Stokes emission in near- (λ ≈ 1.5 μm) and mid-infrared (λ ≈ 2.7 μm) spectral region. Thermal stability and glass-forming ability were found to increase with increasing antimony content but the photon up-conversion emission in green spectral region exhibits an opposite trend because of the red shift in absorption edge. The spectroscopic properties of Er3+ ions in Ga-Ge-Sb-S glassy host matrix were studied on the basis of Judd-Ofelt theory. The calculated spectroscopic quality factor Ω4/Ω6 is approximately 4 higher value than in commercial YAG: Er3+ lasers. Emission cross-section σe(E) of Er3+: 4I13/2 → 4I15/2 (λ ≈ 1.5 μm) was calculated from absorption cross-section σa(E) on the basis of McCumber theory. The optical gain coefficient G(E) was calculated as function of the relative population of the Er3+: 4I13/2 and 4I15/2 manifolds. The high absolute values of the gain coefficient make studied materials interesting for lasing and light amplification. The photon up-conversion emission seems to be promising for example in lasers, sensors and detectors.	Ga-Ge-Sb-S; Er3+; amorphous chalcogenides; photoluminiscence; photon up-conversion