University of PardubiceFaculty of Chemical Technology

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Ag doping of thin films of Ge28-xGaxS72: What we know about it

Authors: Valkova Silviya | Wágner Tomáš | Střižík Lukáš | Vlček Milan | Beneš Ludvík | Bartoš Miroslav

Year: 2014

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Ag doping of thin films of Ge28-xGaxS72: What we know about it	Due to the trend of miniaturization in electronic systems there is high interest in evolving many types of new memory devices. PMC memories are based on the electrochemical growth and removal of nanoscale metallic filaments in thin films of solid electrolyte. Key attributes are low current operation, high speed, good retention and endurance. For this a development of good electrolyte is necessary. In this work thin films of Ag/Ge-Ga-S glassy system were investigated as potential electrolyte. Thin films of Ge28-xGaxS72 with thicknesses in the range of 500-700nm were deposited from the bulk samples by pulsed laser deposition (PLD). The optically-induced diffusion and dissolution was used to dope Ag into the thin films. Several techniques for studying optical properties of Ag doped thin films were used. The study shows maximal amount of dissolved Ag, change of structure and change of optical parameters such as transmittance and refractive index.	thin films; Ag doping; Ge-Ga-S; amorphous chalcogenides