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Crystallization kinetics of Se-Te thin films

Authors: Svoboda Roman | Gutwirth Jan | Málek Jiří | Wágner Tomáš

Year: 2014

Type of publication: článek v odborném periodiku

Name of source: Thin Solid Films

Publisher name: Elsevier Science BV

Place: Amsterdam

Page from-to: 121-126

Titles:

Language	Name	Abstract	Keywords
cze	Krystalizační kinetika Se-Te tenkých vrstev	Pomocí DSC za neizotermních podmínek byla studována kinetika krystalizace v tenkých vrstvách Se-Te s obsahem 0-30 at.% telluru.	DSC; krystalizace; kinetika; Se-Te sklo; tenké vrstvy
eng	Crystallization kinetics of Se-Te thin films	Differential scanning calorimetry was used to study the non-isothermal crystallization behavior of selenium-tellurium thin films within the 0-30 at.% Te compositional range. The non-isothermal crystallization kinetics were described in terms of the Johnson-Mehl-Avrami nucleation-growth model. The apparent activation energy of crystallization was found to exhibit a step-like compositional behavior, with E changing from similar to 115 to similar to 145 kJ.mol(-1) in the 10-15 at.% Te range. Two-dimensional growth of crystallites, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. However, in the case of the Se70Te30 thin film, indications of three-dimensional crystal growth were found at high heating rates. This corresponds to the previously reported behavior of Se-Te chalcogenide matrices, where the addition of tellurium leads to the formation of smaller, volume-located crystallites.	Crystallization kinetics; Differential scanning calorimetry; Johnson-Mehl-Avrami model; Selenium-telluride glass; Thin films